SKU:76009214670
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp
Free Shipping on orders over $50
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers
Centrifugal acceleration: 14 g max
one 1/4" BSPP connector and one hose barb for 1/4'' I
GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method
ID: 82 mm
a 100W Transformer can be purchased separately Sample holder The sample is held by a built-in vacuum chuck
Package Container Sealed in Al Vacuumed Bag
you may place furnaces into the fume hood for better safety
5" Blade Dia 6" Thickness 0
Warranty does not include tube (but only for machine MTI provided)
Polishing: One side polished
Surface finish (RMS or Ra) : One side polished < 100A
Part Number EQ-DB-153741
Easy Shipping
Quick Dispatch:
Your GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp ships.
Need Help?
Questions about GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp, sizing, or delivery? We're just an email away.
Live Shipping Estimates:
Enter your location at checkout to see available shipping methods and costs for GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp in your area.
Get Shipping Estimates
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
You may also like
Ga2O3-beta Single Crystal Substrate, <010>+/-1 degree ori, 5 x 5 x 0.35mm, 2SP, Research grade with "Twin"
399.62
★★★★☆4.8 (23)
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
206.43
★★★★★4.9 (24)
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
163.88
★★★★★5.0 (7)
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
171.35
★★★★★4.7 (10)
Glove Port Cover Gasket for VGB1 - EQ-VGB1-GASKET
1434.50
★★★★★4.9 (9)
GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US
189.18
★★★★★5.0 (28)
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp
114.42
★★★★★4.8 (30)