SKU:76009214670

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp

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Regular price $229.43 USD
Regular price $262.43 USD Sale price $229.43 USD
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21

Description

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers

Centrifugal acceleration: 14 g max

one 1/4" BSPP connector and one hose barb for 1/4'' I

GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method

ID:      82 mm

a 100W Transformer can be purchased separately Sample holder  The sample is held by a built-in vacuum chuck

Package            Container Sealed in Al Vacuumed Bag

you may place furnaces into the fume hood for better safety

5" Blade Dia 6" Thickness 0

Warranty does not include tube (but only for machine MTI provided)

Polishing:                     One  side polished

Surface finish (RMS or Ra) :  One side  polished < 100A

Part Number EQ-DB-153741

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