SKU:56187599845
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 35 4. 21)x10^8Ohm. cm Mobility: 4360 5640cm^2 V. S EPD: <5000cm^ 2 Primary Flat: EJ(0 1 1) Secondary Flat: EJ(0 11) Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
01g (Tabs with Box)
Secondary Flat Length: 7 +/- 1 mm
Polish: one side EPI polished with surface roughness Ra< 5 A
Motor Two 300W high torque DC motor with belt pulley with independent speed control
Package for sales: 1
YSZ Mixing Balls( (Optional)
Options Part 3: Thin Film Thickness / Deposition Rate Monitor
Click to enlarge
Height: 1/2"
67 mm Height = 3
2 mm (+/-0
MSK-116A/117A/118A is a three-piece suite for trimming
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