SKU:82743262081
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: One side polished Doping: Si doped Conductor type: N type Carrier Concentration: (1. 65 3. 92) x 10^18 cm^3 Mobility: 1440 2270 cm^2 V. S Resistivity: (1. 01 1. 90) E 3 ohm. cm EPD: < 500 cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Material: Alumina chamber with heating coils embedded
never applied pressure more than 2 metric ton or 170 MPa
82 Emission wavelength (nm ) 540 410 418 450 / 420 470/540 480 550 Decay constant(ns ) 900 230 0
High-profile silicon O-Rings (2 pcs) can withstand temperatures up to 250°C
Resistivities: 1-20 ohm-cm
Eight independent programmable channels
2Mpa x2 sec by MTI's heat sealing equipment MSK-140 and MSK-115A Solvent Retention
Growing Method: VGF
Operating current: 6 A
0% at 120 Celcius degrees / 1 H
The software (TC8
In order to make thin coating
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