SKU:71305785124
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
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Ships within 48 hours · Estimated delivery Jul 17 - Jul 22
Description
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (2. 67 3. 27) x 10^18 cm^3 Mobility: 116 125 cm^2 V. S EPD: <5000 cm^2 Resistivity: (1. 64 1. 88)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
with domain
TiO2 Coated Glass
Parts should not be placed directly onto the inside surface of a hot furance tube incase of thermal shock
Polish: one side polished by CMP
FPTA-5 particle traps feature right angle mounting conñguration
Orientation: (110)
Better electrical conductivity and less internal resistivity
60 mm in Diameter Optional LSS024 WD-40 3-IN-ONE Professional White Lithium Grease
Surface finish: One side optical polished < 100A
One steel sleeve for core die protection
Mobility: 4360-5640cm^2/V
Dimension Click the picture for more details
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