SKU:28100531474
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 10 x 0. 3 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration:(2. 49 3. 27)x10^18 c. c Mobility: 1630 1870cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Aluminium Powder
Single crystal copper metallic substrate
Polish: two sides EPI polished with surface roughness Ra< 5 A ( measured by AFM 5x5
8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (pls click a picture below 1-2 to enlarge)
Orientation: <111> +/-0
please cut it together with an A4 paper for a better result
Standard compounds handle operating temperatures -85º to +400ºF
Wafer size: 3" dia x 0
0 mA to 12 A
Application Notes You may use the liquid rubber to seal the sample to be CIP ( click Pic below to order )
Wafer size: 100 mm dia x 0
EPD :<10^4/cm2
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