SKU:32419905069
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-USGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Over-temperature protection and alarm allow for operation without attendant(s)
Atomic Number 47
Polished surface: Both sides optically polished
It is suitable for using on the Furnaces (1800C) with SCR & SiC/MoSi2 Heating Elements
Automatic Film Coater with 12"W x 24"L Glass Bed and 250mm Adjustable Doctor Blade - MSK-AFA-II
Power failure mode allows the pump to continue pumping after resetting
as well as high electrode material loading
Orientation: (0001) +/-0
T: force (metric ton) applied to the pressure vessel cylinder
200ppm / 5 years @ 300K
Power Requirement 110V 60Hz
Resistivity: >40 Ohms/cm (If you would like to measure the resistivity accurately
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