SKU:3058795129
GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5GaAs single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (6. 82 7. 58)E 3 ohm. cm Carrier Concentration: (1. 07 1. 26)E19cm^ 3 Mobility: 73 77 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Time interval: 1 - 999999s
One type of battery holder is included in the BST8-MA standard package:
Pressure Vessel
5 Nested Loops Maximum
BK7- glass substrates
5 torrs before filling inert gas
Dielectric constants
Polish: two sides optical polished
Material Safety Data Sheet
Package: one 1000 class clean room with 100 class plastic bag
This furnace heating module (liner and heating elements embedded) is used for the replacement of the VBF-1200X-H8 liner and heating elements
Application case
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