SKU:70523136169
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 20x20x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Temperature Controller
Click the picture below to see the finished polymer Li-Ion battery made by heated sealer
Orientation: M Plane
Working Temperature: 1500oC (without vacuum)
Please clean the grinding ring before each use
If the equipment is going to be placed in an argon atmosphere
Application Notes In order to get better film coating
You may use the compact die cutter to make electrode sheet and fit into the case
7~1Mpa) are needed for the machine operation
Slot Die Structure Made of Stainless steel
Power Extension One extension socket (Max power 1500W) is installed in the glove box main chamber
Please consider to have Seals metal threads to prevents leakage for MTI Flange (MTI-SEAL-MT)
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