SKU:25820549097
GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2USGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers
The standard cell tray is W 148mm
Thickness: 330 +/- 25 um
12mm(T) Active Material Proportion in Powder 94
Net weight:13
995 alumina tubes can be used at operating temperatures to 1700oC in both oxidizing and reducing atmospheres
Polishing: Two sides polished
we will forward your inquiry to the manufacturer
0") produces smoother cuts and is used for cutting rare and valuable materials when waste must be held to a minimum and speed of cut is essential
Orientation: (100) +/-2
The operator must wear protective goggles
Melting Point: 2180 K (1907 °C
mso-border-insidev:
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