![GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2](https://cdn.shopify.com/s/files/1/0533/5600/3482/files/Thumb_GaAs-67_15eb0baf-4383-4a5c-972b-b8326843b08a.jpg?v=1736897490)
SKU:48803990411
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2USGaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 5mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 15 2. 6) E18 cm^3 Mobility: 2700~3600 cm^2 V. S Resistivity: 9E 4~1. 1E 2 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
( at 0 deg
Constant Voltage Discharging
Loading Current: 3A
Since June 3
Polishing: two side polished
4) x 10^16 /cm^3
100 pcs/bag
KF40 Feedthrough with all necessary wire and tube are included to allow operating inside the Glovebox
Specifications Material
Chemical-resistant laminate platform
Carrier Concentration: (5
This die is designed for making 4" sputtering target
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Your GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US orders ship within 1-2 business days.
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