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SKU:54206683895
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2USGaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 485mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 1 0. 6) x 10^18 cm^3 Mobility: 3500 3600 cm^2 V. S Resistivity: (2. 9 10. 7) E 3 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
No warranty provided
Overall Length: 36
44" (63mm) Inside Diameter 32 mm ( 1
Option 2: 120mm flim applicator
~10 mL/(cm2-sec)
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Resistivity: (3
One recirculating water chiller is included
Orientation: (0001) +/- 1
Slot Die Structure Made of Stainless steel
The gas inlet port ( 8" diameter ) and outlet out ( 6") are included
Orientation: <111> +/-1
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