SKU:35064244581
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical GradeGaAs single crystal wafer,Mechanical Grade Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished NOT EPI Ready wafer Doping: undoped Conductor type: Semi Insulating Resistivity: N A Mobility: N A EPD: N A Primary Flat: EJ(0 1 1) Primary Flat Length: 17 + 1 mm Secondary Flat: EJ(0 11) Secondary Flat Length: 7 + 1 mm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
pic1 pic2 Feeding Manually Stroke Length 12mm Cutting Die Life Span ~30000 strokes Compliance CE Certified
Click here to see JCPDS data of DyScO3 (X-ray diffraction index data from powder XRD
SSA: 20 - 30 m2/g
Be cautious of using hazardous materials
The top of the sample holder is covered by Kapton film and tightened by PTFE O-ring
Stage Dimensions (click to enlarge) 480 L x 480 W x 300 H (mm)
Please never use water as the coolant during cutting
Warning: You must pay great attention to die change from one size to another
06 @ 0 oC
Doping: Zn doped
Well connect the Pressure Gauge and two Solenoid Valves to Pressure Control Unit
Film-coated by E-beam evaporation under vacuum below 10-6 torr
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Exchange/Return Notes
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