SKU:10671279269
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: N type Carrier Concentration: (1. 60 3. 94) E18 cm^3 Mobility: (1400 2100) cm^2 V. S Resistivity: (1. 08 1. 90) E 3 ohm. cm EPD: < 500cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
such as EC400 Dicing
x Height) Case: 26mm(OD) x 25
Bulk density: 1
Purity: > 99
please choose coarse (63 microns ) diamond blade at related product below
} Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Trimming Length: 200mm
plastics curing
Shiny Side Roughness (RZ): 1
Wafer Size: 5x5x0
uniform temperature zone
Major Flat Length: 30mm +/- 1mm
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