SKU:52161742444
Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1spSpecifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag
the target pressure decreases a little bit during the pressure holding time
most metals with ease
even in low temperatures
Pocket Size(mm): L1
working temperature: 80oC
20 ns @ 470nm
2mm) in diameter x1
It is your responsibility to find the best milling procedure based on your material
4 alligator clamps (Two small for voltage and two big for current) compatible with other vendor's testing system (Pic
plastics curing
Installation of Mosi2 Heating Element
Height = 3
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