SKU:78748245137

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

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Regular price $21.85 USD
Regular price $51.85 USD Sale price $21.85 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1spSpecifications: Cu coated SiO2 Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 5x5x0. 5 mm SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order

vacuum or inert gas)

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Aluminum Metallic Film

Package:          100 g per lot sealed in Plastic bag

centrifugal fan blower

Thickness of Cu polycrystalline <111> film: 100 nm

Wafer Container

Au(Gold) Single Crystal  Substrate

Part Number EQ-SC0604 Arbor Dia 0

Conductor type:                Semi-insulating

Input Voltage / Power

Mobility:                           4470-6540 cm^2/V

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