SKU:92723699062
FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cmSingle crystal FZ Si Conductive type: P type Boron doped Resistivity: >1000 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2'' diameter x 0. 3 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw
Constant Power Discharging
S-type thermocouple
Centrifugal acceleration: 14 g max
Polished surface: Wafer surface is EPI polished via a special CMP procedure
Oxygen free copper gasket for high vacuum sealing of OTF-1200X-HVHP-80
Ball mill or ground the powder to the size of 32~75 microns powder before pressing
Surface roughness: Ra < 10 A ( by AFM)
Cavity size Ø50mm×10 mm D
8 mm thick permanent magnetic sheet with PSA backing
KF-25 quick clamp is included
Dimension Click the picture for more details
Chemical Engineering
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Exchange/Return Notes
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