SKU:87279418849
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1USResearch Grade , about 90 % usable area GaN template, N+, 2 in diameter FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer ) FLAAT Gallium Nitride Template, N+ (Si doped) 2 in diameter, Si doped Polarity: Ga face Carrier Concentration: > 1E18 cm^3 Nominal GaN Thickness: 15 um + 10 % Front side surface(after deposition and polish): Epi ready with, Ra< 0. 5 nm RMS (data obtained via using a white light interferometer ) Back side surface:
30000cycles
One battery testing control unit could connect up to 10 battery-and-supercapacitor analyzers
Packing: packed in plastic bag with vacuum
08" (90+/-2mm) O
Growing Method: VGF
Back surface finish: as received
Vacuum is used for purging the chamber before the operation
Withdraw/Infuse
Orientation: (100) +/-2
Size: 2" dia x 0
we can modify your tube furnace into evaporating coater
Model Number EQ-Die-12D-316 Max
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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