SKU:87279418849

FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US

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Regular price $342.12 USD
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20

Description

FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1USResearch Grade , about 90 % usable area GaN template, N+, 2 in diameter FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer ) FLAAT Gallium Nitride Template, N+ (Si doped) 2 in diameter, Si doped Polarity: Ga face Carrier Concentration: > 1E18 cm^3 Nominal GaN Thickness: 15 um + 10 % Front side surface(after deposition and polish): Epi ready with, Ra< 0. 5 nm RMS (data obtained via using a white light interferometer ) Back side surface:

30000cycles

One battery testing control unit could connect up to 10 battery-and-supercapacitor analyzers

Packing:                      packed in plastic bag with vacuum

08" (90+/-2mm) O

Growing Method:   VGF

Back surface finish:                  as received

Vacuum is used for purging the chamber before the operation

Withdraw/Infuse

Orientation:                        (100) +/-2

Size:                                         2" dia x 0

we can modify your tube furnace into evaporating coater

Model Number EQ-Die-12D-316 Max

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
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